Premium
Organic Semiconductors: Dry Lithography of Large‐Area, Thin‐Film Organic Semiconductors Using Frozen CO 2 Resists (Adv. Mater. 46/2012)
Author(s) -
Bahlke Matthias E.,
Mendoza Hiroshi A.,
Ashall Daniel T.,
Yin Allen S.,
Baldo Marc A.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290293
Subject(s) - resist , materials science , lithography , photolithography , organic semiconductor , semiconductor , nanotechnology , thin film , optoelectronics , layer (electronics)
Frozen carbon dioxide can be used as a phase‐change resist to perform dry lithography of organic thin films, as shown by Matthias E. Bahlke and co‐workers on page 6136 . The resist sublimes closest to the surface, separating the still‐solid resist that in turn lifts off undesired organic material. This new technique will help address the incompatibility of organic semiconductors with traditional photolithography.