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Carbon Nanotubes: High Performance Ambipolar Field‐Effect Transistor of Random Network Carbon Nanotubes (Adv. Mater. 46/2012)
Author(s) -
Bisri Satria Zulkarnaen,
Gao Jia,
Derenskyi Vladimir,
Gomulya Widianta,
Iezhokin Igor,
Gordiichuk Pavlo,
Herrmann Andreas,
Loi Maria Antonietta
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290292
Subject(s) - carbon nanotube , ambipolar diffusion , materials science , transistor , dispersion (optics) , nanotechnology , polymer , field effect transistor , electron , composite material , electrical engineering , optics , physics , engineering , quantum mechanics , voltage
Selective purification of carbon nanotubes using conjugated polymers is utilized on page 6147 by Maria Antonietta Loi, Satria Zulkarnaen Bisri, and co‐workers to fabricate high‐performance ambipolar transistors. A device of drop‐casted random‐network nanotubes demonstrates high carrier mobilities and high on/off ratios for holes and electron accumulations. Together with the optical measurement results, the performance of the transistor indicates the purity of the nanotube dispersion with minimum residual polymer.