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Lithography: Resolution Limit in Plasmonic Lithography for Practical Applications beyond 2x‐nm Half Pitch (Adv. Mater. 44/2012)
Author(s) -
Kim Seok,
Jung Howon,
Kim Yongwoo,
Jang Jinhee,
Hahn Jae W.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290284
Subject(s) - materials science , plasmon , lithography , resolution (logic) , ridge , next generation lithography , optics , computational lithography , optoelectronics , nanotechnology , x ray lithography , electron beam lithography , resist , physics , paleontology , artificial intelligence , computer science , biology , layer (electronics)
The ultimate resolution of plasmonic lithography using a ridge aperture is evaluated using a theoretical model by Jae W. Hahn and co‐workers on page OP337 . A circular contact probe with high positioning accuracy is fabricated to record high density line array patterns with a half pitch up to 22 nm. The model fits well with the experimental results for pattern depth and predicts the resolution of plasmonic lithography to be less than 10 nm.