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Organic Complementary Circuits: Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits (Adv. Mater. 40/2012)
Author(s) -
Baeg KangJun,
Khim Dongyoon,
Jung SoonWon,
Kang Minji,
You InKyu,
Kim DongYu,
Facchetti Antonio,
Noh YongYoung
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290247
Subject(s) - ambipolar diffusion , materials science , dielectric , optoelectronics , transistor , electronic circuit , dipole , organic field effect transistor , gate dielectric , electron mobility , field effect transistor , electrical engineering , voltage , electron , organic chemistry , chemistry , physics , quantum mechanics , engineering
On page 5433 , Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate dielectric blend of P(VDF‐TrFE):PMMA.