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3D Organic Field‐Effect Transistors: Flexible Three‐Dimensional Organic Field‐Effect Transistors Fabricated by an Imprinting Technique (Adv. Mater. 38/2012)
Author(s) -
Nakahara Rie,
Uno Mayumi,
Uemura Takafumi,
Takimiya Kazuo,
Takeya Jun
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290234
Subject(s) - materials science , imprinting (psychology) , transistor , field effect transistor , optoelectronics , nanotechnology , molecular imprinting , catalysis , electrical engineering , selectivity , organic chemistry , chemistry , voltage , biochemistry , gene , engineering
Flexible three‐dimensional organic field‐effect transistors (3D‐OFETs) are fabricated on plastic substrates by a simple imprinting technique, as reported by Jun Takeya, Mayumi Uno, and co‐workers on page 5212 . Featuring multiplied vertical channels with short channel lengths of sub‐microns, the flexible 3D‐OFETs show high output current density and fast response within 140 ns. This imprinting technique is favorable for industrial application with advantages of low‐cost, a high throughput, and easy processes.