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Resistive Switching Memories: Observation of Conductance Quantization in Oxide‐Based Resistive Switching Memory (Adv. Mater. 29/2012)
Author(s) -
Zhu Xiaojian,
Su Wenjing,
Liu Yiwei,
Hu Benlin,
Pan Liang,
Lu Wei,
Zhang Jiandi,
Li RunWei
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290176
Subject(s) - conductance , materials science , quantization (signal processing) , resistive random access memory , oxide , resistive touchscreen , nanotechnology , optoelectronics , electrical conductor , non volatile memory , condensed matter physics , composite material , electrical engineering , quantum mechanics , computer science , physics , electrode , metallurgy , engineering , computer vision
Conductance quantization phenomena in oxide‐based resistive switching memories are reported by Xiaojian Zhu, Wei Lu, Run‐Wei Li, and co‐workers on page 3941 . These phenomena were found to relate to the atomic‐scale conductive filaments formed in insulating oxides under an applied electrical field. The study shows that the quantum conductance effect can be well modulated and can be used for multi‐level data storage.