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Micromechanical Resonators: AlN/3C–SiC Composite Plate Enabling High‐Frequency and High‐ Q Micromechanical Resonators (Adv. Mater. 20/2012)
Author(s) -
Lin ChihMing,
Chen YungYu,
Felmetsger Valery V.,
Senesky Debbie G.,
Pisano Albert P.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290115
Subject(s) - materials science , resonator , composite number , coupling (piping) , composite material , epitaxy , layer (electronics) , optoelectronics
An AlN/3C–SiC composite is used to realize high‐frequency and high‐Q acoustic wave resonators by exploiting the third‐order quasi‐symmetric (QS 3 ) Lamb wavemode, as described by C.‐M. Lin, Y.‐Y. Chen, and co‐workers on page 2722 . The epitaxial 3C–SiC layer enhances the electromechanical coupling of the QS 3 mode and boosts the Q due to the intrinsic low acoustic loss of SiC crystals. This AlN/3C–SiC composite plate structure enables production of high‐performance micromechanical acoustic wave resonators for frequency control and sensing applications.