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Resistive Switching: Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM (Adv. Mater. 14/2012)
Author(s) -
Liu Qi,
Sun Jun,
Lv Hangbing,
Long Shibing,
Yin Kuibo,
Wan Neng,
Li Yingtao,
Sun Litao,
Liu Ming
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290080
Subject(s) - resistive random access memory , electrolyte , materials science , dissolution , oxide , anode , electrical conductor , cathode , nanotechnology , resistive touchscreen , chemical engineering , electrode , composite material , electrical engineering , metallurgy , chemistry , engineering
M. Liu and co‐workers present an effective methodology on page 1844 to investigate in real‐time the evolution of growth/dissolution of conductive filaments (CFs) in oxide‐electrolyte resistance random access memory (RRAM). Contrary to common belief, it is found that CF growth begins at the anode (Ag or Cu), rather than having to reach the cathode (Pt) and grow backwards. A modified microscopic mechanism is also determined for the switching behavior of oxide‐electrolyte RRAM.