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Memory Devices: Structural and Electrical Characterization of a Block Copolymer‐Based Unipolar Nonvolatile Memory Device (Adv. Mater. 3/2012)
Author(s) -
Kang NamGoo,
Cho Byungjin,
Kang BeomGoo,
Song Sunghoon,
Lee Takhee,
Lee JaeSuk
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290012
Subject(s) - materials science , lamellar structure , copolymer , carbazole , characterization (materials science) , non volatile memory , block (permutation group theory) , electrical conductor , nanotechnology , chemical engineering , polymer chemistry , composite material , optoelectronics , polymer , organic chemistry , chemistry , geometry , mathematics , engineering
Jae‐Suk Lee, Takhee Lee, and co‐workers investigate on page 385 . structural and electrical characteristics of synthesized block copolymers consisting of poly(9‐(4‐vinylphenyl)carbazole)‐b‐poly(2‐vinylpyridine) Various morphologies such as spherical or lamellar structures with microphase separation are obtained. In particular, devices with a lamellar structure exhibited memory switching, which is strongly related to the formation and rupture of highly conductive paths consisting primarily of carbazole segments.