Premium
High Mobility N‐Type Transistors Based on Solution‐Sheared Doped 6,13‐Bis(triisopropylsilylethynyl)pentacene Thin Films
Author(s) -
Naab Benjamin D.,
Himmelberger Scott,
Diao Ying,
Vandewal Koen,
Wei Peng,
Lussem Björn,
Salleo Alberto,
Bao Zhenan
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201205098
Subject(s) - pentacene , materials science , dopant , thin film transistor , doping , transistor , optoelectronics , thin film , nanotechnology , layer (electronics) , physics , voltage , quantum mechanics
An N‐Type organic thin‐film transistor (OTFT) based on doped 6,13‐Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p‐type to n‐type occurrs with increasing doping concentrations, and the highest performing n‐channel OTFTs are obtained with 50 mol% dopant. X‐ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.