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Low Driving Voltage and High Mobility Ambipolar Field‐Effect Transistors with PbS Colloidal Nanocrystals
Author(s) -
Bisri Satria Zulkarnaen,
Piliego Claudia,
Yarema Maksym,
Heiss Wolfgang,
Loi Maria Antonietta
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201205041
Subject(s) - ambipolar diffusion , materials science , nanocrystal , transistor , nanotechnology , field effect transistor , electron mobility , optoelectronics , gating , colloid , voltage , chemical engineering , electron , electrical engineering , physiology , physics , engineering , quantum mechanics , biology
PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size‐tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.