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Structural and Optoelectronic Characterization of RF Sputtered ZnSnN 2
Author(s) -
Lahourcade Lise,
Coronel Naomi C.,
Delaney Kris T.,
Shukla Sujeet K.,
Spaldin Nicola A.,
Atwater Harry A.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204718
Subject(s) - materials science , orthorhombic crystal system , band gap , characterization (materials science) , semiconductor , optoelectronics , doping , engineering physics , nanotechnology , crystal structure , crystallography , physics , chemistry
ZnSnN 2 , a new earth‐abundant semiconductor , is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2 1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein‐Moss effect.