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Highly Improved Uniformity in the Resistive Switching Parameters of TiO 2 Thin Films by Inserting Ru Nanodots
Author(s) -
Yoon Jung Ho,
Han Jeong Hwan,
Jung Ji Sim,
Jeon Woojin,
Kim Gun Hwan,
Song Seul Ji,
Seok Jun Yeong,
Yoon Kyung Jean,
Lee Min Hwan,
Hwang Cheol Seong
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204572
Subject(s) - nanodot , limiting , materials science , resistive random access memory , nanoscopic scale , key (lock) , nanotechnology , field (mathematics) , cathode , optoelectronics , computer science , engineering physics , electrical engineering , physics , voltage , mechanical engineering , computer security , mathematics , pure mathematics , engineering
Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric‐field distribution can solve the non‐uniformity issue of future ReRAM.