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Electrolyte‐Gated SmCoO 3 Thin‐Film Transistors Exhibiting Thickness‐Dependent Large Switching Ratio at Room Temperature
Author(s) -
Xiang PingHua,
Asanuma Shutaro,
Yamada Hiroyuki,
Sato Hiroshi,
Inoue Isao H.,
Akoh Hiroshi,
Sawa Akihito,
Kawasaki Masashi,
Iwasa Yoshihiro
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204505
Subject(s) - transistor , materials science , gating , thin film transistor , channel (broadcasting) , optoelectronics , electrolyte , layer (electronics) , condensed matter physics , nanotechnology , voltage , computer science , electrical engineering , electrode , telecommunications , physics , quantum mechanics , physiology , biology , engineering
A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO 3 . From the thickness dependence of the on‐state channel current, we estimate the screening length of the SmCoO 3 to be ∼5 nm. The good carrier confinement within the Thomas‐Fermi screening length demonstrates that the SmCoO 3 ‐channel electric double layer transistor is the first candidate for a two‐dimensional Mott transistor.