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Bandgap‐Graded CdS x Se 1–x Nanowires for High‐Performance Field‐Effect Transistors and Solar Cells
Author(s) -
Li Liang,
Lu Hao,
Yang Zongyin,
Tong Limin,
Bando Yoshio,
Golberg Dmitri
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204434
Subject(s) - materials science , nanowire , band gap , optoelectronics , field effect transistor , schottky barrier , transistor , wide bandgap semiconductor , nanotechnology , electrical engineering , diode , voltage , engineering
CdS x Se 1–x nanowires with a graded bandgap along the length direction were utilized for field‐effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future.