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Low‐Temperature Solution‐Processed Hydrogen Molybdenum and Vanadium Bronzes for an Efficient Hole‐Transport Layer in Organic Electronics
Author(s) -
Xie Fengxian,
Choy Wallace C. H.,
Wang Chuandao,
Li Xinchen,
Zhang Shaoqing,
Hou Jianhui
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204425
Subject(s) - materials science , molybdenum , vanadium , oxide , transition metal , oxygen , inorganic chemistry , layer (electronics) , vanadium oxide , hydrogen , metal , molybdenum oxide , nanotechnology , chemical engineering , metallurgy , organic chemistry , chemistry , catalysis , engineering
A simple one‐step method is reported to synthesize low‐temperature solution‐processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole‐transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics.