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Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Author(s) -
Balatti S.,
Larentis S.,
Gilmer D. C.,
Ielmini D.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204097
Subject(s) - resistive random access memory , orientation (vector space) , protein filament , electrical conductor , materials science , resistive touchscreen , variable (mathematics) , service (business) , nanotechnology , computer science , voltage , optoelectronics , electrical engineering , engineering , mathematical analysis , geometry , mathematics , economy , economics , composite material , computer vision
Multilevel operation in resistive switching memory (RRAM) based on HfO x is demonstrated through variable sizes and orientations of the conductive filament. Memory states with the same resistance, but opposite orientation of defects, display a different response to an applied read voltage, therefore allowing an improvement of the information stored in each physical cell. The multilevel scheme allows a 50% increase (from 2 to 3 bits) of the stored information.