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Evolutionary Selection Growth: Towards Template‐Insensitive Preparation of Single‐Crystal Layers
Author(s) -
Leung Benjamin,
Song Jie,
Zhang Yu,
Han Jung
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201204047
Subject(s) - materials science , selection (genetic algorithm) , nanotechnology , template , semiconductor , computer science , optoelectronics , artificial intelligence
A method for growth of large‐area, selectively defined, single‐crystal semiconductor material on an amorphous template has been demonstrated. In two steps, the degrees of freedom in crystal orientation have been reduced by the principle of evolutionary selection, starting with the deposition of a textured aluminum nitride seed on SiO 2 , and the longitudinal growth of gallium nitride single crystals. This concept enables the integration of semiconductor materials with a new range of substrates.