Premium
Silicon p‐i‐n Junction Fibers
Author(s) -
He Rongrui,
Day Todd D.,
Krishnamurthi Mahesh,
Sparks Justin R.,
Sazio Pier J. A.,
Gopalan Venkatraman,
Badding John V.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203879
Subject(s) - materials science , photovoltaics , chemical vapor deposition , photodetection , optoelectronics , photovoltaic system , nanotechnology , engineering physics , photodetector , electrical engineering , physics , engineering
Flexible Si p‐i‐n junction fibers made by high pressure chemical vapor deposition offer new opportunities in textile photovoltaics and optoelectronics, as exemplified by their photovoltaic properties, gigahertz bandwidth for photodetection, and ability to waveguide light.