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Ion‐Irradiation‐Induced Defects in Isotopically‐Labeled Two Layered Graphene: Enhanced In‐Situ Annealing of the Damage
Author(s) -
Kalbac Martin,
Lehtinen Ossi,
Krasheninnikov Arkady V.,
Kein Juhani
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203807
Subject(s) - materials science , annealing (glass) , graphene , in situ , irradiation , ion , binary number , molecular physics , analytical chemistry (journal) , nanotechnology , composite material , nuclear physics , organic chemistry , chemistry , physics , arithmetic , mathematics
Contrary to theoretical estimates based on the conventional binary collision model, experimental results indicate that the number of defects in the lower layer of the bi‐layer graphene sample is smaller than in the upper layer. This observation is explained by in situ self‐annealing of the defects.