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Tellurium Thin Films in Hybrid Organic Electronics: Morphology and Mobility
Author(s) -
Ireland Robert M.,
Zhang Lushuai,
Gopalan Padma,
Katz Howard E.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203647
Subject(s) - materials science , substrate (aquarium) , field effect transistor , organic semiconductor , semiconductor , transistor , nanotechnology , organic electronics , thin film transistor , nanoscopic scale , tellurium , optoelectronics , layer (electronics) , metallurgy , oceanography , voltage , geology , physics , quantum mechanics
Elemental Te displays a wide variety of nanoscale morphologies of vapor‐deposited films, depending on the substrate surface and temperature. These morphologies are correlated to field‐effect mobilities in transistors made with Te as the lone semiconductor or from Te‐organic multilayer semiconductors. Two examples of morphologies and transistor output characteristics, i.e., on a room temperature oxide and heated organic, are shown in the figure.

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