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Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide
Author(s) -
Balendhran Sivacarendran,
Deng Junkai,
Ou Jian Zhen,
Walia Sumeet,
Scott James,
Tang Jianshi,
Wang Kang L.,
Field Matthew R.,
Russo Salvy,
Zhuiykov Serge,
Strano Michael S.,
Medhekar Nikhil,
Sriram Sharath,
Bhaskaran Madhu,
Kalantarzadeh Kourosh
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203346
Subject(s) - materials science , dielectric , charge carrier , electron mobility , optoelectronics , fabrication , band gap , scattering , limiting , high κ dielectric , charge (physics) , oxide , condensed matter physics , optics , physics , quantum mechanics , engineering , medicine , mechanical engineering , alternative medicine , pathology , metallurgy
We demonstrate that the energy bandgap of layered, high‐dielectric α‐MoO 3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α‐MoO 3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm 2 V −1 s −1 are obtained.