Nano‐Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect | Zendy

Zhou Yu Sheng | Zendy; Hinchet Ronan | Zendy; Yang Ya | Zendy; Ardila Gustavo | Zendy; Songmuang Rudeesun | Zendy; Zhang Fang | Zendy; Zhang Yan | Zendy; Han Weihua | Zendy; Pradel Ken | Zendy; Montès Laurent | Zendy; Mouis Mireille | Zendy; Wang Zhong Lin | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Nano‐Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect

Author(s) -

Zhou Yu Sheng,

Hinchet Ronan,

Yang Ya,

Ardila Gustavo,

Songmuang Rudeesun,

Zhang Fang,

Zhang Yan,

Han Weihua,

Pradel Ken,

Montès Laurent,

Mouis Mireille,

Wang Zhong Lin

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201203263

Subject(s) - materials science , nanowire , transverse plane , nano , optoelectronics , nanotechnology , composite material , structural engineering , engineering

Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano‐Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro‐/nanosensor arrays or artificial skin.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research