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Nano‐Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect
Author(s) -
Zhou Yu Sheng,
Hinchet Ronan,
Yang Ya,
Ardila Gustavo,
Songmuang Rudeesun,
Zhang Fang,
Zhang Yan,
Han Weihua,
Pradel Ken,
Montès Laurent,
Mouis Mireille,
Wang Zhong Lin
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203263
Subject(s) - materials science , nanowire , transverse plane , nano , optoelectronics , nanotechnology , composite material , structural engineering , engineering
Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano‐Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro‐/nanosensor arrays or artificial skin.