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Metal–Insulator–Metal Diodes: Role of the Insulator Layer on the Rectification Performance
Author(s) -
Periasamy Prakash,
Guthrey Harvey L.,
Abdulagatov Aziz I.,
Ndione Paul F.,
Berry Joseph J.,
Ginley David S.,
George Steven M.,
Parilla Philip A.,
O'Hayre Ryan P.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203075
Subject(s) - insulator (electricity) , materials science , metal insulator metal , rectification , diode , metal , layer (electronics) , optoelectronics , nanotechnology , metallurgy , electrical engineering , voltage , capacitor , engineering
A systematic study of the role of the insulator layer on rectification performance in metal–insulator–metal structures is reported. Four different MIM systems with Nb/Pt metal pairs and Nb 2 O 5 , TiO 2 , Al 2 O 3 , MgO as the insulator candidates are investigated based on an empirical hypothesis. As per the hypothesis and experimental verification, several prospective MIM systems such as Sm/ZrO 2 /Pt and Hf/TiO 2 /Pt are identified and a MIM materials‐space is constructed.