Metal–Insulator–Metal Diodes: Role of the Insulator Layer on the Rectification Performance | Zendy

Periasamy Prakash | Zendy; Guthrey Harvey L. | Zendy; Abdulagatov Aziz I. | Zendy; Ndione Paul F. | Zendy; Berry Joseph J. | Zendy; Ginley David S. | Zendy; George Steven M. | Zendy; Parilla Philip A. | Zendy; O'Hayre Ryan P. | Zendy

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Metal–Insulator–Metal Diodes: Role of the Insulator Layer on the Rectification Performance

Author(s) -

Periasamy Prakash,

Guthrey Harvey L.,

Abdulagatov Aziz I.,

Ndione Paul F.,

Berry Joseph J.,

Ginley David S.,

George Steven M.,

Parilla Philip A.,

O'Hayre Ryan P.

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201203075

Subject(s) - insulator (electricity) , materials science , metal insulator metal , rectification , diode , metal , layer (electronics) , optoelectronics , nanotechnology , metallurgy , electrical engineering , voltage , capacitor , engineering

A systematic study of the role of the insulator layer on rectification performance in metal–insulator–metal structures is reported. Four different MIM systems with Nb/Pt metal pairs and Nb 2 O 5 , TiO 2 , Al 2 O 3 , MgO as the insulator candidates are investigated based on an empirical hypothesis. As per the hypothesis and experimental verification, several prospective MIM systems such as Sm/ZrO 2 /Pt and Hf/TiO 2 /Pt are identified and a MIM materials‐space is constructed.

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