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Substituent Variation Drives Metal/Monolayer/Semiconductor Junctions from Strongly Rectifying to Ohmic Behavior
Author(s) -
HajYahia AbdElrazek,
Yaffe Omer,
Bendikov Tatyana,
Cohen Hagai,
Feldman Yishay,
Vilan Ayelet,
Cahen David
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201203028
Subject(s) - ohmic contact , materials science , substituent , monolayer , schottky diode , semiconductor , optoelectronics , schottky barrier , metal , chemical physics , condensed matter physics , nanotechnology , diode , layer (electronics) , stereochemistry , chemistry , physics , metallurgy
An eight‐orders of magnitude enhancement in current across Hg/X‐styrene‐Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.