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Transparent High‐Performance Thin Film Transistors from Solution‐Processed SnO 2 /ZrO 2 Gel‐like Precursors
Author(s) -
Jang Jaewon,
Kitsomboonloha Rungrot,
Swisher Sarah L.,
Park Eung Seok,
Kang Hongki,
Subramanian Vivek
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202997
Subject(s) - materials science , thin film transistor , transistor , saturation (graph theory) , optoelectronics , sol gel , threshold voltage , dielectric , nanotechnology , voltage , analytical chemistry (journal) , chemical engineering , electrical engineering , chromatography , layer (electronics) , mathematics , engineering , combinatorics , chemistry
This work employs novel SnO 2 gel‐like precursors in conjunction with sol–gel deposited ZrO 2 gate dielectrics to realize high‐performance transparent transistors . Representative devices show excellent performance and transparency, and deliver mobility of 103 cm 2 V −1 s −1 in saturation at operation voltages as low as 2 V, a sub‐threshold swing of only 0.3 V/decade, and I on / I off of 10 4 ∼10 5 .
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