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Two‐Stage Metal‐Catalyst‐Free Growth of High‐Quality Polycrystalline Graphene Films on Silicon Nitride Substrates
Author(s) -
Chen Jianyi,
Guo Yunlong,
Wen Yugeng,
Huang Liping,
Xue Yunzhou,
Geng Dechao,
Wu Bin,
Luo Birong,
Yu Gui,
Liu Yunqi
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202973
Subject(s) - graphene , materials science , chemical vapor deposition , crystallite , nanotechnology , nitride , silicon nitride , silicon , catalysis , optoelectronics , metallurgy , organic chemistry , chemistry , layer (electronics)
By using two‐stage, metal‐catalyst‐free chemical vapor deposition (CVD), it is demonstrated that high‐quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm 2 V −1 s −1 , which is about three times the value of those grown on SiO 2 /Si substrates, and also is better than some examples of metal‐catalyzed graphene, reflecting the good quality of the graphene lattice.