N‐Type Colloidal‐Quantum‐Dot Solids for Photovoltaics | Zendy

Zhitomirsky David | Zendy; Furukawa Melissa | Zendy; Tang Jiang | Zendy; Stadler Philipp | Zendy; Hoogland Sjoerd | Zendy; Voznyy Oleksandr | Zendy; Liu Huan | Zendy; Sargent Edward H. | Zendy

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N‐Type Colloidal‐Quantum‐Dot Solids for Photovoltaics

Author(s) -

Zhitomirsky David,

Furukawa Melissa,

Tang Jiang,

Stadler Philipp,

Hoogland Sjoerd,

Voznyy Oleksandr,

Liu Huan,

Sargent Edward H.

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201202825

Subject(s) - materials science , quantum dot , chalcogen , photovoltaics , nanotechnology , halide , inert , colloid , halogen , ion , chemical engineering , inorganic chemistry , crystallography , photovoltaic system , organic chemistry , chemistry , ecology , alkyl , engineering , biology

N‐type PbS colloidal‐quantum‐dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm 2 V −1 s −1 . The halogen ions serve both as a passivating agent and n‐dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 10 16 to 10 18 cm −3 is varied systematically.

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