Premium
N‐Type Colloidal‐Quantum‐Dot Solids for Photovoltaics
Author(s) -
Zhitomirsky David,
Furukawa Melissa,
Tang Jiang,
Stadler Philipp,
Hoogland Sjoerd,
Voznyy Oleksandr,
Liu Huan,
Sargent Edward H.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202825
Subject(s) - materials science , quantum dot , chalcogen , photovoltaics , nanotechnology , halide , inert , colloid , halogen , ion , chemical engineering , inorganic chemistry , crystallography , photovoltaic system , organic chemistry , chemistry , ecology , alkyl , engineering , biology
N‐type PbS colloidal‐quantum‐dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm 2 V −1 s −1 . The halogen ions serve both as a passivating agent and n‐dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 10 16 to 10 18 cm −3 is varied systematically.