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Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature
Author(s) -
Pattanasattayavong Pichaya,
YaacobiGross Nir,
Zhao Kui,
Ndjawa Guy Olivier Ngongang,
Li Jinhua,
Yan Feng,
O'Regan Brian C.,
Amassian Aram,
Anthopoulos Thomas D.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202758
Subject(s) - materials science , thiocyanate , transistor , optoelectronics , thin film transistor , dielectric , semiconductor , copper , band gap , nanotechnology , inorganic chemistry , voltage , electrical engineering , metallurgy , layer (electronics) , chemistry , engineering
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p‐type thin‐film transistors processed from solution at room temperature. By combining CuSCN with the high‐ k relaxor ferroelectric polymeric dielectric P(VDF‐TrFE‐CFE), we demonstrate low‐voltage transistors with hole mobilities on the order of 0.1 cm 2 V −1 s −1 . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.