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Stacking‐Order‐Dependent Optoelectronic Properties of Bilayer Nanofilm Photodetectors Made From Hollow ZnS and ZnO Microspheres
Author(s) -
Hu Linfeng,
Chen Min,
Shan Wenze,
Zhan Tianrong,
Liao Meiyong,
Fang Xiaosheng,
Hu Xinhua,
Wu Limin
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202749
Subject(s) - stacking , materials science , bilayer , photodetector , photocurrent , monolayer , optoelectronics , nanotechnology , microsphere , membrane , chemical engineering , physics , nuclear magnetic resonance , biology , engineering , genetics
Innovative bilayer nanofilms composed of semiconducting ZnS and ZnO hollow microspheres are successfully fabricated by an oil–water interfacial self‐assembly strategy. The photocurrent of the bilayer film‐based photodetectors is dependent on the stacking orders of the building blocks. The optimal optoelectronic properties of the ZnS(up)/ZnO(down) device are much better than those of the monolayer‐film based device.