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High Performance Ambipolar Field‐Effect Transistor of Random Network Carbon Nanotubes
Author(s) -
Bisri Satria Zulkarnaen,
Gao Jia,
Derenskyi Vladimir,
Gomulya Widianta,
Iezhokin Igor,
Gordiichuk Pavlo,
Herrmann Andreas,
Loi Maria Antonietta
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202699
Subject(s) - ambipolar diffusion , materials science , carbon nanotube , transistor , conjugated system , field effect transistor , nanotechnology , dispersion (optics) , polymer , electron , optoelectronics , electrical engineering , physics , engineering , quantum mechanics , voltage , composite material , optics
Ambipolar field‐effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm 2 /V·s) with a high on/off ratio (10 6 ). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.