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Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys
Author(s) -
Puttisong Yuttapoom,
Buyanova Irina A.,
Ptak Aaron J.,
Tu Charles W.,
Geelhaar Lutz,
Riechert Henning,
Chen Weimin M.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202597
Subject(s) - amplifier , materials science , spin (aerodynamics) , electron , thermal conduction , semiconductor , optoelectronics , physics , quantum mechanics , thermodynamics , cmos , composite material
The first experimental demonstration of a spin amplifier at room temperature is presented . An efficient, defect‐enabled spin amplifier based on a non‐magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut‐off frequency of up to 1 GHz.