Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys | Zendy

Puttisong Yuttapoom | Zendy; Buyanova Irina A. | Zendy; Ptak Aaron J. | Zendy; Tu Charles W. | Zendy; Geelhaar Lutz | Zendy; Riechert Henning | Zendy; Chen Weimin M. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Author(s) -

Puttisong Yuttapoom,

Buyanova Irina A.,

Ptak Aaron J.,

Tu Charles W.,

Geelhaar Lutz,

Riechert Henning,

Chen Weimin M.

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201202597

Subject(s) - amplifier , materials science , spin (aerodynamics) , electron , thermal conduction , semiconductor , optoelectronics , physics , quantum mechanics , thermodynamics , cmos , composite material

The first experimental demonstration of a spin amplifier at room temperature is presented . An efficient, defect‐enabled spin amplifier based on a non‐magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut‐off frequency of up to 1 GHz.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research