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Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High‐Performance Small‐Molecule‐Based Ternary Memory Device with Low Threshold Voltage
Author(s) -
Miao Shifeng,
Li Hua,
Xu Qingfeng,
Li Youyong,
Ji Shunjun,
Li Najun,
Wang Lihua,
Zheng Junwei,
Lu Jianmei
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202319
Subject(s) - materials science , ternary operation , charge (physics) , optoelectronics , voltage , crystallinity , planarity testing , molecule , threshold voltage , low voltage , nanotechnology , computer science , electrical engineering , crystallography , physics , transistor , chemistry , quantum mechanics , composite material , programming language , engineering
By introducing a coplanar fluorenone into the center of an azo molecule, the turn‐on voltages of the ternary memory devices are significantly decreased to lower than –2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low‐power consumption devices will have great potential applications in high‐performance chips for future portable nanoelectronic devices.