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Giant Electrostriction in Gd‐Doped Ceria
Author(s) -
Korobko Roman,
Patlolla Anitha,
Kossoy Anna,
Wachtel Ellen,
Tuller Harry L.,
Frenkel Anatoly I.,
Lubomirsky Igor
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202270
Subject(s) - electrostriction , materials science , doping , cerium , stress (linguistics) , xanes , vacancy defect , chemical physics , condensed matter physics , optoelectronics , composite material , metallurgy , piezoelectricity , spectral line , linguistics , philosophy , physics , astronomy
Gd‐doped CeO 2 exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium‐oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd‐doped ceria is a representative of a new family of high‐performance electromechanical materials.