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Highly Air‐Stable Phosphorus‐Doped n‐Type Graphene Field‐Effect Transistors
Author(s) -
Some Surajit,
Kim Jangah,
Lee Keunsik,
Kulkarni Atul,
Yoon Yeoheung,
Lee SaeMi,
Kim Taesung,
Lee Hyoyoung
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202255
Subject(s) - graphene , materials science , doping , field effect transistor , nanotechnology , atmosphere (unit) , transistor , optoelectronics , physics , quantum mechanics , meteorology , voltage
Phosphorus‐doped double‐layered graphene field‐effect transistors (PDGFETs) show much stronger air‐stable n‐type behavior than nitrogen‐doped double‐layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air‐stable n‐type graphene channels.