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Current‐Confinement Structure and Extremely High Current Density in Organic Light‐Emitting Transistors
Author(s) -
Sawabe Kosuke,
Imakawa Masaki,
Nakano Masaki,
Yamao Takeshi,
Hotta Shu,
Iwasa Yoshihiro,
Takenobu Taishi
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202252
Subject(s) - materials science , ambipolar diffusion , optoelectronics , current (fluid) , oled , transistor , current density , luminance , diode , etching (microfabrication) , laser , electron , layer (electronics) , optics , nanotechnology , physics , quantum mechanics , voltage , electrical engineering , engineering
Extremely high current densities are realized in single‐crystal ambipolar light‐emitting transistors using an electron‐injection buffer layer and a current‐confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm −2 , which is an efficiency‐preservation improvement of three orders of magnitude over conventional organic light‐emitting diodes (OLEDs) at high current densities.
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