Infrared Photodetectors Based on CVD‐Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity | Zendy

Sun Zhenhua | Zendy; Liu Zhike | Zendy; Li Jinhua | Zendy; Tai Guoan | Zendy; Lau ShuPing | Zendy; Yan Feng | Zendy

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Infrared Photodetectors Based on CVD‐Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

Author(s) -

Sun Zhenhua,

Liu Zhike,

Li Jinhua,

Tai Guoan,

Lau ShuPing,

Yan Feng

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201202220

Subject(s) - materials science , responsivity , graphene , photodetector , quantum dot , infrared , optoelectronics , doping , nanotechnology , optics , physics

Infrared photodetectors based on single‐layer CVD‐grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10 7 A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field‐effect doping in graphene films induced by negative charges generated in the quantum dots.

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