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Infrared Photodetectors Based on CVD‐Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity
Author(s) -
Sun Zhenhua,
Liu Zhike,
Li Jinhua,
Tai Guoan,
Lau ShuPing,
Yan Feng
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202220
Subject(s) - materials science , responsivity , graphene , photodetector , quantum dot , infrared , optoelectronics , doping , nanotechnology , optics , physics
Infrared photodetectors based on single‐layer CVD‐grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10 7 A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field‐effect doping in graphene films induced by negative charges generated in the quantum dots.