High‐Hole‐Mobility Field‐Effect Transistors Based on  Co‐ Benzobisthiadiazole‐Quaterthiophene | Zendy

Fan Jian | Zendy; Yuen Jonathan D. | Zendy; Cui Weibin | Zendy; Seifter Jason | Zendy; Mohebbi Ali Reza | Zendy; Wang Mingfeng | Zendy; Zhou Huiqiong | Zendy; Heeger Alan | Zendy; Wudl Fred | Zendy

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High‐Hole‐Mobility Field‐Effect Transistors Based on Co‐ Benzobisthiadiazole‐Quaterthiophene

Author(s) -

Fan Jian,

Yuen Jonathan D.,

Cui Weibin,

Seifter Jason,

Mohebbi Ali Reza,

Wang Mingfeng,

Zhou Huiqiong,

Heeger Alan,

Wudl Fred

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201202195

Subject(s) - materials science , polymer , thin film transistor , annealing (glass) , electron mobility , thin film , transistor , field effect transistor , enhanced data rates for gsm evolution , optoelectronics , organic field effect transistor , nanotechnology , composite material , electrical engineering , telecommunications , layer (electronics) , engineering , voltage , computer science

High‐mobility organic thin film transistors based on a benzobisthiadiazole‐containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of “edge‐on” orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm 2 V −1 s −1 .

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