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High‐Hole‐Mobility Field‐Effect Transistors Based on Co‐ Benzobisthiadiazole‐Quaterthiophene
Author(s) -
Fan Jian,
Yuen Jonathan D.,
Cui Weibin,
Seifter Jason,
Mohebbi Ali Reza,
Wang Mingfeng,
Zhou Huiqiong,
Heeger Alan,
Wudl Fred
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202195
Subject(s) - materials science , polymer , thin film transistor , annealing (glass) , electron mobility , thin film , transistor , field effect transistor , enhanced data rates for gsm evolution , optoelectronics , organic field effect transistor , nanotechnology , composite material , electrical engineering , telecommunications , layer (electronics) , engineering , voltage , computer science
High‐mobility organic thin film transistors based on a benzobisthiadiazole‐containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of “edge‐on” orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm 2 V −1 s −1 .