Nearly Temperature‐Independent Threshold for Amplified Spontaneous Emission in Colloidal CdSe/CdS Quantum Dot‐in‐Rods | Zendy

Moreels Iwan | Zendy; Rainò Gabriele | Zendy; Gomes Raquel | Zendy; Hens Zeger | Zendy; Stöferle Thilo | Zendy; Mahrt Rainer F. | Zendy

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Nearly Temperature‐Independent Threshold for Amplified Spontaneous Emission in Colloidal CdSe/CdS Quantum Dot‐in‐Rods

Author(s) -

Moreels Iwan,

Rainò Gabriele,

Gomes Raquel,

Hens Zeger,

Stöferle Thilo,

Mahrt Rainer F.

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201202067

Subject(s) - lasing threshold , quantum dot , materials science , spontaneous emission , optoelectronics , amplified spontaneous emission , auger effect , nanocrystal , laser , molecular beam epitaxy , nanotechnology , quantum dot laser , semiconductor , semiconductor laser theory , auger , optics , atomic physics , epitaxy , physics , wavelength , layer (electronics)

By careful engineering of the core and shell dimensions in CdSe/CdS colloidal hetero‐nanocrystals , amplified spontaneous emission can be triggered from either the core, shell, or both states simultaneously. The ASE threshold is almost constant over a temperature interval of 5–325 K. This feature is unique to quantum dots and highlights their potential as a gain material, suitable for lasing at elevated temperatures.

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