Premium
Nearly Temperature‐Independent Threshold for Amplified Spontaneous Emission in Colloidal CdSe/CdS Quantum Dot‐in‐Rods
Author(s) -
Moreels Iwan,
Rainò Gabriele,
Gomes Raquel,
Hens Zeger,
Stöferle Thilo,
Mahrt Rainer F.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201202067
Subject(s) - lasing threshold , quantum dot , materials science , spontaneous emission , optoelectronics , amplified spontaneous emission , auger effect , nanocrystal , laser , molecular beam epitaxy , nanotechnology , quantum dot laser , semiconductor , semiconductor laser theory , auger , optics , atomic physics , epitaxy , physics , wavelength , layer (electronics)
By careful engineering of the core and shell dimensions in CdSe/CdS colloidal hetero‐nanocrystals , amplified spontaneous emission can be triggered from either the core, shell, or both states simultaneously. The ASE threshold is almost constant over a temperature interval of 5–325 K. This feature is unique to quantum dots and highlights their potential as a gain material, suitable for lasing at elevated temperatures.