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High‐Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared
Author(s) -
Choi Woong,
Cho Mi Yeon,
Konar Aniruddha,
Lee Jong Hak,
Cha GiBeom,
Hong Soon Cheol,
Kim Sangsig,
Kim Jeongyong,
Jena Debdeep,
Joo Jinsoo,
Kim Sunkook
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201909
Subject(s) - materials science , subthreshold conduction , optoelectronics , ultraviolet , infrared , specific detectivity , threshold voltage , photoconductivity , photodiode , photodetector , optics , voltage , transistor , dark current , physics , quantum mechanics
Phototransistors based on multilayer MoS 2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single‐layer MoS 2 phototransistors. Multilayer MoS 2 phototransistors further exhibit high room temperature mobilities (>70 cm 2 V −1 s −1 ), near‐ideal subthreshold swings (∼70 mV decade −1 ), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.
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