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Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum‐Electronic Heterostructures
Author(s) -
Evans P. G.,
Savage D. E.,
Prance J. R.,
Simmons C. B.,
Lagally M. G.,
Coppersmith S. N.,
Eriksson M. A.,
Schülli T. U.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201833
Subject(s) - materials science , heterojunction , quantum well , nanoscopic scale , condensed matter physics , synchrotron , quantum , nanometre , quantum dot , optoelectronics , nanotechnology , optics , physics , composite material , laser , quantum mechanics
Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum‐information devices . Synchrotron X‐ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.