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Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation
Author(s) -
Hwang Sun Kak,
Bae Insung,
Kim Richard Hahnkee,
Park Cheolmin
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201831
Subject(s) - ferroelectricity , materials science , data retention , transistor , optoelectronics , voltage , non volatile memory , field effect transistor , insulator (electricity) , channel (broadcasting) , nanotechnology , electrical engineering , engineering , dielectric
A flexible field‐effect transistor with a poly(3‐hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride‐ co ‐trifluoro ethylene) (PVDF‐TrFE) insulator exhibits gate‐voltage‐controllable multilevel non‐volatile memory characteristics with highly reliable data retention and endurance.