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Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi 2 Se 3
Author(s) -
Taskin A. A.,
Sasaki Satoshi,
Segawa Kouji,
Ando Yoichi
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201827
Subject(s) - topological insulator , materials science , sapphire , thin film , quantum oscillations , coherence (philosophical gambling strategy) , electron , coherence length , phase coherence , insulator (electricity) , deposition (geology) , optoelectronics , quantum , condensed matter physics , nanotechnology , superconductivity , optics , physics , quantum mechanics , fermi surface , laser , paleontology , sediment , biology
High‐quality thin films of topological insulator Bi 2 Se 3 grown on sapphire substrates present a long phase coherence length and allow direct observations of surface quantum oscillations. The key to achieving high mobility of surface electrons is to raise the main deposition temperature to 300−320 °C, which necessitates a two‐step deposition procedure with the initial epilayer deposited at 110−130 °C.
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