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Stable Solution‐Processed Molecular n ‐Channel Organic Field‐Effect Transistors
Author(s) -
Hwang Do Kyung,
Dasari Raghunath R.,
Fenoll Mathieu,
AlainRizzo Valérie,
Dindar Amir,
Shim Jae Won,
Deb Nabankur,
FuentesHernandez Canek,
Barlow Stephen,
Bucknall David G.,
Audebert Pierre,
Marder Seth R.,
Kippelen Bernard
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201689
Subject(s) - materials science , electron mobility , substrate (aquarium) , tetrazine , transistor , diimide , channel (broadcasting) , thermal stability , naphthalene , optoelectronics , nanotechnology , molecule , chemical engineering , organic chemistry , computer science , electrical engineering , telecommunications , chemistry , oceanography , perylene , engineering , voltage , geology
A new solution‐processable small‐molecule containing electron‐poor naphthalene diimide and tetrazine moieties has been synthesized. The optimized spin‐coated n ‐channel OFETs on glass substrate shows electron mobility value up to 0.15 cm 2 V −1 s −1 . Inkjet‐printed OFETs are fabricated in ambient atmosphere on flexible plastic substrates, which exhibits an electron mobility value up to 0.17 cm 2 V −1 s −1 and also shows excellent environmental and operational stability.