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Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO
Author(s) -
Chen Guang,
Song Cheng,
Chen Chao,
Gao Shuang,
Zeng Fei,
Pan Feng
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201595
Subject(s) - materials science , doping , ferromagnetism , resistive touchscreen , modulation (music) , cobalt , simple (philosophy) , optoelectronics , nanotechnology , condensed matter physics , computer science , physics , philosophy , epistemology , acoustics , metallurgy , computer vision
A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy‐based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.