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Low‐Threshold Nanolasers Based on Slab‐Nanocrystals of H‐Aggregated Organic Semiconductors
Author(s) -
Xu Zhenzhen,
Liao Qing,
Shi Qiang,
Zhang Haoli,
Yao Jiannian,
Fu Hongbing
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201579
Subject(s) - materials science , lasing threshold , optoelectronics , population inversion , laser , photonics , spontaneous emission , organic semiconductor , semiconductor , purcell effect , population , optics , wavelength , physics , demography , sociology
Low‐threshold nanolasers based on slab nanocrystals (SNCs) of highly emissive H‐aggregated organic semiconductors are reported. A lasing threshold as low as 100 nJ cm −2 is achieved in a high‐quality (cavity quality factor ≈ 1000) Fabry–Pérot cavity constituted by the two lateral‐faces of SNCs at the wavelength scale. Moreover, the laser light generated in the ultrasmall radial cavity of SNCs can propagate along its length up to hundreds of micrometers, making them attractive building blocks for miniaturized photonic circuits.