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Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits
Author(s) -
Baeg KangJun,
Khim Dongyoon,
Jung SoonWon,
Kang Minji,
You InKyu,
Kim DongYu,
Facchetti Antonio,
Noh YongYoung
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201464
Subject(s) - ambipolar diffusion , materials science , dielectric , field effect transistor , optoelectronics , transistor , electronic circuit , semiconductor , electron mobility , gate dielectric , organic semiconductor , electrical engineering , electron , physics , voltage , quantum mechanics , engineering
A remarkable enhancement of p‐channel properties is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm 2 V −1 s −1 ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high‐performance complementary‐like inverters and ring oscillator circuits.