Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits

A remarkable enhancement of p‐channel properties is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm 2 V −1 s −1 ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high‐performance complementary‐like inverters and ring oscillator circuits.