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High Density and Large Area Arrays of Silicon Oxide Pillars with Tunable Domain Size for Mask Etch Applications
Author(s) -
Gu Xiaodan,
Dorsey Paul,
Russell Thomas P.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201278
Subject(s) - materials science , silicon , silicon oxide , oxide , etching (microfabrication) , reactive ion etching , optoelectronics , nanotechnology , deep reactive ion etching , layer (electronics) , silicon nitride , metallurgy
Silicon oxide pillars with tunable feature sizes and pitches are fabricated based on a block copolymer self‐assembly template . By using reactive ion etching (RIE), the feature size of the silicon oxide pillars can be tuned without affecting the pitch. Using BCP with a different molecular weight can change the pitch size of the silicon oxide pillars. An area density of up to 2 teradots/inch 2 is achieved.