Premium
Compensating Poly(3‐hexylthiophene) Reveals Its Doping Density and Its Strong Exciton Quenching by Free Carriers
Author(s) -
Liang Ziqi,
Gregg Brian A.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201157
Subject(s) - materials science , cobaltocene , exciton , doping , dopant , quenching (fluorescence) , free carrier , condensed matter physics , charge carrier , luminescence , charge carrier density , symmetry (geometry) , conductivity , optoelectronics , polymer , optics , fluorescence , physics , quantum mechanics , composite material , polymerization , geometry , mathematics , metallocene
Adding increasing quantities of an n‐type compensating dopant, cobaltocene , to poly(3‐hexylthiophene) reveals an almost perfect mirror symmetry between the conductivity and the luminescence intensity. The sharp minimum/maximum shows that the uncompensated p‐type doping density is 1.2 × 10 18 cm −3 and that excitons are strongly quenched by free charge carriers, not by bound charges.