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Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics
Author(s) -
Yu Ruomeng,
Dong Lin,
Pan Caofeng,
Niu Simiao,
Liu Hongfei,
Liu Wei,
Chua Soojin,
Chi Dongzhi,
Wang Zhong Lin
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201020
Subject(s) - materials science , schottky barrier , optoelectronics , nanotechnology , flexible electronics , gallium nitride , layer (electronics) , diode
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.