Premium
Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics
Author(s) -
Yu Ruomeng,
Dong Lin,
Pan Caofeng,
Niu Simiao,
Liu Hongfei,
Liu Wei,
Chua Soojin,
Chi Dongzhi,
Wang Zhong Lin
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201201020
Subject(s) - materials science , schottky barrier , optoelectronics , nanotechnology , flexible electronics , gallium nitride , layer (electronics) , diode
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom